SGL50T120SFD IGBT FieldStop Trench 1200V 50A TO-264

SGL50T120SFD IGBT خندق FieldStop ZKEEP0Z ZKEEP1Z TO-264

The SGL50T120SFD is a high-performance Insulated Gate Bipolar Transistor (IGBT) featuring advanced FieldStop Trench technology that combines the low conduction losses of a bipolar transistor with the simple gate-drive characteristics of a MOSFET. Designed for high-voltage and high-current applications, this device offers excellent switching performance, low saturation voltage, and high efficiency in demanding power electronics systems. It also incorporates an antiparallel fast-recovery diode, simplifying inverter and motor control designs.

The device is housed in a TO-264 package, providing excellent thermal performance and mechanical robustness for industrial applications. Its positive temperature coefficient enables safer parallel operation, while the FieldStop structure improves switching speed and reduces power dissipation. These characteristics make the SGL50T120SFD suitable for renewable energy systems, UPS equipment, welding machines, motor drives, PFC circuits, and other high-power switching applications.

سمات:

• تقنية FieldStop Trench.
• فقدان منخفض للطاقة.
• الصمام الثنائي المتكامل.
• معامل درجة الحرارة الإيجابية.
• مقاومة عالية للإدخال.
• استقرار حراري ممتاز.

تحديد:

دبوس:

التطبيقات

• دوائر PFC (تصحيح معامل القدرة).
• UPS (مصادر الطاقة غير المنقطعة).
• محولات للتحكم في المحركات أو الطاقة المتجددة.
• تطبيقات التبديل العامة عالية السرعة.

محتوى الحزمة

• 1 × SGL50T120SFD IGBT FieldStop Trench ZKEEP0Z ZKEEP1Z TO-264.