BDW93C NPN Darlington ترانزستور 12A 100V TO-220

BDW93C NPNدارلينجتون الترانزستورZKEEP0Z ZKEEP1Z TO-220

The BDW93C is a robust silicon power transistor engineered using an Epitaxial-Base NPN process and configured in a monolithic Darlington arrangement. This design integrates two transistors into a single device, resulting in a component capable of delivering very high current gain. It is specifically intended for demanding roles in both power linear amplification and high-speed switching circuits, making it a versatile solution for controlling significant power levels in industrial environments.

The transistor is constructed in a monolithic Darlington configuration, which internally pairs two bipolar transistors to multiply the current gain, allowing a small base current to control a much larger collector current. This entire assembly is securely housed in a industry-standard Jedec TO-220 plastic package. This package is renowned for its mechanical durability and excellent thermal performance, facilitating easy mounting to a heat sink to manage the substantial power dissipation during operation.

A key feature of its design is the integration of an antiparallel collector-emitter diode within the same monolithic structure. This internal diode provides inherent protection against voltage spikes in inductive load applications. Furthermore, the BDW93C is offered as part of a complementary pair, with the BDW94Cيعمل كنظير PNP المباشر، مما يبسط تصميم مراحل إخراج الدفع والسحب والدوائر المتناظرة الأخرى.

سمات:

• تكوين دارلينجتون متآلف.
• صمام ثنائي متكامل للجامع والباعث مضاد للتوازي.
• تتوفر أجهزة PNP – NPN التكميلية.
• أنواع المبيعات المفضلة لشركة STMicroelectronics.

المواصفات:

مخطط Pinout:

مخطط البصمة:

التطبيقات:

• المعدات الصناعية الخطية.
• تبديل المعدات الصناعية.

محتويات الحزمة:

• 1x BDW93C NPN دارلينجتون الترانزستور ZKEEP0Z ZKEEP1Z TO-220

ورقة البيانات